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III-Vs Review formerly known as Euro III-Vs ReviewRSS Feed
ISSN: 0961-1290
December 2006, 19 (9)

Table of Contents:
 

All aboard the nitride bus

III-Vs Review (December 2006), 19 (9), pg. 2-2

No abstract

 

More changes at Filtronic

III-Vs Review (December 2006), 19 (9), pg. 4-4

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Nichia settles US dispute

III-Vs Review (December 2006), 19 (9), pg. 4-4

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AXT founder retires

III-Vs Review (December 2006), 19 (9), pg. 4-4

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WSTS projects 8.5% chip growth

III-Vs Review (December 2006), 19 (9), pg. 5-5

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Q-cells AG to invest in Solibro CIGS

III-Vs Review (December 2006), 19 (9), pg. 5-5

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Markets & business

III-Vs Review (December 2006), 19 (9), pg. 5-6

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TranSiC AB first round

III-Vs Review (December 2006), 19 (9), pg. 6-6

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WiMAX poised for growth

III-Vs Review (December 2006), 19 (9), pg. 6-6

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MEAD consortium to explore MEMS

III-Vs Review (December 2006), 19 (9), pg. 6-6

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Four Veeco R&D MBE systems on order

III-Vs Review (December 2006), 19 (9), pg. 7-7

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Veeco leadership transition plan

III-Vs Review (December 2006), 19 (9), pg. 7-7

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New form of germanium synthesized

III-Vs Review (December 2006), 19 (9), pg. 8-8

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Microelectronics

III-Vs Review (December 2006), 19 (9), pg. 8-8

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Cree sampling GaN HEMTs

III-Vs Review (December 2006), 19 (9), pg. 8-8

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WJ communications first with 28 V InGaP HBT power amps

III-Vs Review (December 2006), 19 (9), pg. 9-9

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STMicroelectronics & Velox GaN Schottky diodes

III-Vs Review (December 2006), 19 (9), pg. 9-9

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M/A-COM PA MMICs for P2P radios

III-Vs Review (December 2006), 19 (9), pg. 9-9

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Zarlink introduces sub-micron BiCMOS

III-Vs Review (December 2006), 19 (9), pg. 9-9

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RFMD GaN wideband power amplifier ICs

III-Vs Review (December 2006), 19 (9), pg. 10-10

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Toshiba GaN beats GaAs for power FETs

III-Vs Review (December 2006), 19 (9), pg. 10-10

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Mars rovers rely on StratEdge power amplifier package

III-Vs Review (December 2006), 19 (9), pg. 10-10

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Mitsubishi WiMAX transistor Trio

III-Vs Review (December 2006), 19 (9), pg. 11-11

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TriQuint MMIC for class 1 Bluetooth

III-Vs Review (December 2006), 19 (9), pg. 11-11

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Nitronex power transistors for broadband

III-Vs Review (December 2006), 19 (9), pg. 11-11

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LED bonding pads

III-Vs Review (December 2006), 19 (9), pg. 12-12

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LED lighting runs off AC mains

III-Vs Review (December 2006), 19 (9), pg. 12-12

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LED lighting helps Wal-Mart save energy

III-Vs Review (December 2006), 19 (9), pg. 12-12

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EMCORE's QSFP device availability

III-Vs Review (December 2006), 19 (9), pg. 12-12

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OSRAM Opto MicroSIDELED now 1.6 cd

III-Vs Review (December 2006), 19 (9), pg. 13-13

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Cree LED agreement

III-Vs Review (December 2006), 19 (9), pg. 13-13

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100GbE demo across 4,000-km

III-Vs Review (December 2006), 19 (9), pg. 13-13

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LED driver enables brighter flash in camera-phones

III-Vs Review (December 2006), 19 (9), pg. 13-13

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Sharp violet laser diode debuts

III-Vs Review (December 2006), 19 (9), pg. 14-14

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Lumex expands PCB LED line

III-Vs Review (December 2006), 19 (9), pg. 14-14

No abstract

 

Cree decreasing reliance on LEDs

III-Vs Review (December 2006), 19 (9), pg. 14-14

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Osram opto adds SUSS LithoFab200 cluster system

III-Vs Review (December 2006), 19 (9), pg. 14-14

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Avago launches at electronica include half-watt LED for auto

III-Vs Review (December 2006), 19 (9), pg. 15-15

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Cree first 160 lumen white power LED

III-Vs Review (December 2006), 19 (9), pg. 15-15

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Applied adds Brooks Software

III-Vs Review (December 2006), 19 (9), pg. 16-16

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Equipment & materials processing

III-Vs Review (December 2006), 19 (9), pg. 16-16

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Bede ships BedeMetrix-F with ScribeView for SiGe

III-Vs Review (December 2006), 19 (9), pg. 16-16

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Bandwidth adds Veeco MOCVD for eVCSELs

III-Vs Review (December 2006), 19 (9), pg. 16-16

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Keithley updates Pulse Test Software

III-Vs Review (December 2006), 19 (9), pg. 17-17

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PANalytical sales & support opens in Mexico

III-Vs Review (December 2006), 19 (9), pg. 17-17

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Ergonomic MKS series 48 heaters

III-Vs Review (December 2006), 19 (9), pg. 18-18

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First Dragon CVD for SiC bulk

III-Vs Review (December 2006), 19 (9), pg. 18-18

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Oxford Lasers MBO

III-Vs Review (December 2006), 19 (9), pg. 18-18

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Hiden online knowledgebase

III-Vs Review (December 2006), 19 (9), pg. 18-18

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ULVAC-JDSU optical coating deal

III-Vs Review (December 2006), 19 (9), pg. 19-19

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ECellAs as-cracker source for MBE

III-Vs Review (December 2006), 19 (9), pg. 19-19

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TOPTICA picks Laser 2000 Italia

III-Vs Review (December 2006), 19 (9), pg. 19-19

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Compound's role grows in nano's paradigm shift

III-Vs Review (December 2006), 19 (9), pg. 20-27

The emergence of phage 'viruses' at MIT as the new compound tool kit or November's launch of the first nano blog to cover thin film, organic and printable electronics (http://blog.nanomarkets.net/blog/client) are just two of the deluge of nano developments all clamouring... [view more]


 

Parallel conduction in semiconductors

III-Vs Review (December 2006), 19 (9), pg. 28-32

Electronic transport characterization in semiconductor materials is becoming increasingly difficult as multi-layer and multi-carrier materials become more common. Examples include multiply doped or compensated regions, doping non-uniformities perpendicular to the conduction plane, 2D carriers at surfaces and interfaces, heterostructures, multiple quantum well structures, and ... [view more]


 

GaN makes inroads in the wireless infrastructure

III-Vs Review (December 2006), 19 (9), pg. 33-35

One of the most rapidly developing segments of the broader semiconductor industry is the telecommunications market, where manufacturers seek to profit from the huge volume of mobile phone handsets. Some 960 million handsets were shipped in the 2005-2006 period, and volume is still growing, driven in part ... [view more]


 

NEDO GaN HB-LED HVPE project

III-Vs Review (December 2006), 19 (9), pg. 36-38

Nippon EMC Ltd is Japan's oldest and most successful manufacturer of metal-organic phase vapour epitaxy (MOPVE) systems. The company was awarded a New Energy and Industrial Technology Development Organization (NEDO) grant for the development of hydride vapour phase epitaxy (HVPE) systems for mass production of... [view more]


 

Native substrates for GaN: the plot thickens

III-Vs Review (December 2006), 19 (9), pg. 39-41

Gallium nitride (GaN) is often regarded more or less as the younger brother of gallium arsenide (GaAs), and to some extent this is an accurate view. Lately, GaN has been receiving a great deal of attention, for the most part because its strong points - handling ... [view more]


 

Competition and challenge markets for III-Vs?

III-Vs Review (December 2006), 19 (9), pg. 42-44

Anyone who has ever worked for a UK Ministry of Defence supplier becomes quickly aware of the anomaly in spelling the US Department of Defense. In compound terminology, for the US, think 'defenestration' and 'window for opportunity'. For the UK, more claustrophobically, think fenced in.... [view more]


 

People

III-Vs Review (December 2006), 19 (9), pg. 45-46

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Diary of events

III-Vs Review (December 2006), 19 (9), pg. 47-47

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Xmas is coming

III-Vs Review (December 2006), 19 (9), pg. 48-48

It is appropriate at this point of the magazine to wish our readers world over all the best of the season's greetings. No doubt next year will be just as exciting as 2006. Generally, it has been an interesting one, even if it has not been a ... [view more]


 


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