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Photoluminescence associated with quantum dots in cubic GaN/InGaN/GaN double heterostructures
Physica E (March 2002), 13 (2-4), pg. 1090-1093 
O. Husberg; A. Khartchenko; H. Vogelsang; D.J. As; K. Lischka; O.C. Noriega; A. Tabata; L.M.R. Scolfaro; J.R. Leite

78.55.Cr |  78.67.Hc |  81.05.Ea |  81.15.Hi |  Quantum dots |  III-nitrides |  Phase separation
 

We report on investigations of the photoluminescence of cubic GaN/InxGa1−xN/GaN double heterostructures with x between 0.09 and 0.33. The room temperature emission of all samples is found at about 2.3–2.4eV. High resolution X-ray diffraction measurements reveal an In-rich phase with x=0.56. Luminescence line narrowing in resonant excitation experiments indicate that the photoluminescence stems from quantum-dot-like structures of the In-rich phase. Postgrowth annealing at temperatures up to 700°C demonstrates an obvious stability of the quantum dots.

   

Permalink: http://resolver.scholarsportal.info/resolve/13869477/v13i2-4/1090_pawqdicgdh

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Photoluminescence associated with quantum dots in cubic GaN/InGaN/GaN double heterostructures